[24p-61C-8~12] 15.4 III-V-group nitride crystals | The 71st JSAP Spring Meeting 2024

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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[24p-61C-8~12]15.4 III-V-group nitride crystals

Sun. Mar 24, 2024 4:45 PM - 6:00 PM JST
Sun. Mar 24, 2024 7:45 AM - 9:00 AM UTC

61C (Building No. 6)

Kazuyoshi Iida(豊田合成)

4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[24p-61C-8]Correlation between localized emission and growth morphology of AlGaN on sputtered and annealed AlN templates

〇Shuhei Ichikawa^1,2, Kazuki Saito¹, Ryota Akaike³, Kenjiro Uesugi^3,4, Takao Nakamura⁵, Hideto Miyake⁵, Kazunobu Kojima¹ (1.Grad. Sch. of Eng., Osaka Univ., 2.Research Center for UHVEM, Osaka Univ., 3.ORIP, Mie Univ., 4.Grad. Sch. of RIS, Mie Univ., 5.Grad. Sch. of Eng., Mie Univ.)

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[24p-61C-9]Temperature dependence of optical polarization in AlGaN-based multiple quantum wells with emission wavelength around 220 nm

Kosuke Inai¹, Kaichi Tani¹, Hiromasa Hayashi¹, Aoi Sasaki¹, 〇Hideaki Murotani², Satoshi Kurai¹, Narihito Okada¹, Ryota Akaike³, Hideto Miyake⁴, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT, Tokuyama Coll., 3.ORIP, Mie Univ., 4.Mie Univ.)

5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[24p-61C-10]Short-term degradation mechanisms of 275-nm-band AlGaN LEDs (II)

〇Shigefusa Chichibu¹, Kohei Shima¹, Koji Okuno², Masaki Oya², Yoshiki Saito², Yoshio Honda³, Hiroshi Amano³, Hisanori Ishiguro⁴, Tetsuya Takeuchi⁴ (1.Tohoku Univ., 2.Toyoda Gosei, 3.Nagoya Univ., 4.Meijo Univ.)

5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[24p-61C-11]High efficiency UVC-LED with optical interference effect and encapsulation structure

〇Koji Okuno^1,2, Rie Iwatsuki², Masaki Ohya¹, Yoshiki Saito^1,2, Shintaro Hakamata¹, Takeshi Matsushima¹, Aya Kawaoka¹, Shota Shimonishi¹, Hisanori Ishiguro², Satoshi Kamiyama², Motoaki Iwaya², Tetsuya Takeuchi² (1.Toyoda Gosei, 2.Meijo Univ.)

5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[24p-61C-12]Increasing the efficiency of 222 nm AlGaN far-UVC LED with polarization-doping layer

〇Harshitha Rangaraju¹, Yuki Nakamura^1,2, Kou Sumishi^1,3, Ajmal Khan¹, Sachie Fujikawa^2,1, Hiroyuki Yaguchi², Akira Endoh³, Hiroki Fujishiro³, Yasushi Iwaisako⁴, Hideki Hirayama¹ (1.RIKEN, 2.Saitama University, 3.Tokyo University of Science, 4.Nippon Tungsten)

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