The 86th JSAP Autumn Meeting 2025
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Session Details

Oral presentation13 Semiconductors : 13.9 Compound solar cells

[9p-N323-1~11]13.9 Compound solar cells

Tue. Sep 9, 2025 1:30 PM - 4:30 PM JST
Tue. Sep 9, 2025 4:30 AM - 7:30 AM UTC
N323 (Lecture Hall North)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)English Presentation

[9p-N323-1][The 58th Young Scientist Presentation Award Speech] Improved photovoltaic properties of ZnTe-based solar cells using high-quality P-doped ZnTe layers with a cracked Zn3P2 dopant source by MBE

〇Muhamad Mustofa1, Katsuhiko Saito1, Qixin Guo1, Tooru Tanaka1 (1.Saga Univ.)
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)

[9p-N323-2]Investigation of carrier generation mechanism via the intermediate band in ZnTeO intermediate band solar cells

〇(M2)Yuta Suetugu1, Katsuhiko Saito1, Qixin Guo1, Tooru Tanaka1 (1.Saga Univ.)
2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[9p-N323-3]MBE Growth of Zn1-xCdxTe photoelectrode for hydrogen production

〇Koya Matsuo1, Katsuhiko Saito1, Qixin Guo1, Shigeru Ikeda2, Tooru Tanaka1 (1.Saga Univ, 2.Konan Univ)
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[9p-N323-4]CsPbBr3-xClx -Based Two-Step Photon Upconversion Solar Cells with Embedded PbS Quantum Dots

〇(M1)Soma Ueno1, Hambalee Mahamu1, Asahi Shigeo1, Kita Takashi1 (1.Kobe Univ.)
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[9p-N323-5]Photosensitive Properties of CsPbBr3 Nanocrystals under Bichromatic Photoexcitation of Above-bandgap and Sub-bandgap Photons

〇(DC)Hambalee Mahamu1, Soma Ueno1, Shigeo Asahi1, Takashi Kita1 (1.Kobe Univ.)
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[9p-N323-6]Epitaxy of ZnSnP2 on GaAs using Zn3P2 as the zinc source

〇Isshin Sumiyoshi1, Yoshitaro Nose1 (1.Kyoto Univ.)
3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[9p-N323-7]Na and Li encapsulation into type II Ge clathrate films

〇Eito Ito1, Tetsuji Kume1,2, Fumitaka Ohashi1,2, Rahul Kumar3, Himanshu Jha1,2 (1.GNST, Gifu Univ, 2.Faculty of Engineering, Gifu Univ, 3.NIT, Gifu College)
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[9p-N323-8]Effect of Sn-S precursor and sulfurization pressure on the sulfurization growth of SnS thin films

〇Haruki Ryu1, Taketo Tsuchiyama1, Kazushi Ogo1, Kazuma Saisu1, Mutsumi Sugiyama1,2 (1.Tokyo Univ. Sci., 2.RIST)
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[9p-N323-9]Fabrication of wurtzite-type ZnO1-xSx thin films via reactive sputtering with sulfur plasma

〇(D)Daiki Daiki Motai1, Issei Suzuki1, Taichi Nogami1, Hitoshi Tampo2, Takehiko Nagai2, Norio Terada2, Masami Aono3, Takahisa Omata1 (1.Tohoku Univ., 2.AIST, 3.Kagoshima Univ.)
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[9p-N323-10]Electrical properties of CIGS diodes fabricated at low temperatures

〇Jiro Nishinaga1, Manabu Togawa2, Shogo Ishizuka1 (1.AIST, 2.KEK)
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[9p-N323-11]Analysis of electrical characteristics in Cu(In,Ga)Se2 p-n diodes by various acid treatments

〇(M1)Keigo Urasaki1, Jiro Nishinaga2, Hironori Okumura1, Shogo Ishizuka2 (1.Univ. of Tsukuba, 2.AIST)
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