[14a-K101-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

9:15 AM - 9:45 AM JST(12:15 AM - 12:45 AM UTC)

[14a-K101-2] [The 16th Silicon Technology Division Paper Award Speech] 4 nm-thick Hf_0.5Zr_0.5O₂ ferroelectric capacitor with low operating voltage and high endurance and its challenges of process temperature and wake-up

〇Kasidit Toprasertpong¹, Kento Tahara¹, Yukinobu Hikosaka², Ko Nakamura², Hitoshi Saito², Mitsuru Takenaka¹, Shinichi Takagi¹ (1.Univ. Tokyo, 2.RAMXEED)

Keywords:

Ferroelectric,HZO,Thin film

Hf_0.5Zr_0.5O₂ (HZO) ferroelectrics have gained attention as a high-capacity ferroelectric memory compatible with CMOS processes, offering advantages over conventional ferroelectrics like PZT and BTO, particularly in technology nodes below 100 nm. However, two major challenges for the practical application of HZO ferroelectric memory have been its high operating voltage and poor endurance property. This presentation introduces research findings that demonstrate how HZO thin-film fabrication technology can serve as a key solution to overcoming both of these challenges.