The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation13 Semiconductors : 13.5 Semiconductor devices/ Interconnect/ Integration technologies

[14a-K101-1~10]13.5 Semiconductor devices/ Interconnect/ Integration technologies

Fri. Mar 14, 2025 9:00 AM - 12:15 PM JST
Fri. Mar 14, 2025 12:00 AM - 3:15 AM UTC
K101 (Lecture Hall Bldg.)
Osamu Nakatsuka(Nagoya Univ.)
PR
SonySemiconductor
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[14a-K101-1]The 16th Silicon Technology Division Paper Award / Young Researcher Award Ceremony

〇Jiro Ida1,2 (1.Chief Secretary of Silicon Technology Division, 2.Kanazawa Inst. of Tech.)
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9:15 AM - 9:45 AM JST(12:15 AM - 12:45 AM UTC)

[14a-K101-2][The 16th Silicon Technology Division Paper Award Speech] 4 nm-thick Hf0.5Zr0.5O2 ferroelectric capacitor with low operating voltage and high endurance and its challenges of process temperature and wake-up

〇Kasidit Toprasertpong1, Kento Tahara1, Yukinobu Hikosaka2, Ko Nakamura2, Hitoshi Saito2, Mitsuru Takenaka1, Shinichi Takagi1 (1.Univ. Tokyo, 2.RAMXEED)
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9:45 AM - 10:15 AM JST(12:45 AM - 1:15 AM UTC)

[14a-K101-3][The 16th Silicon Technology Division Paper Award Speech] Origin of Low-Frequency Noise in Si n-MOSFET at Cryogenic Temperatures: The Effect of Interface Quality

〇Hiroshi Oka1, Takumi Inaba1, Shunsuke Shitakata1,2, Kimihiko Kato1, Shota Iizuka1, Hidehiro Asai1, Hiroshi Fuketa1, Takahiro Mori1 (1.AIST, 2.Keio Univ.)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[14a-K101-4][The 16th Silicon Technology Division Young Researcher Award] High-power Planar-type Si Thermoelectric Generator with Phononic Nanostructure

〇Ryoto Yanagisawa1, Masahiro Nomura1 (1.IIS Univ. of Tokyo)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14a-K101-5]Evaluation of Low-Temperature Characteristics of High-Voltage Transistors in Cryo-CMOS for Superconducting Qubit Control

〇(B)Seibun Oshio1, Mizuki Kobayashi1, Kazuki Adachi1, Ryousuke Hyashi1, Keito Yoshinaga2, Ken Uchida2, Munehiro Tada1 (1.Keio Univ, 2.Tokyo Univ)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[14a-K101-6]Cryogenic 200nm SOI-FET Self-Heating and Thermal Conduction to Adjacent Devices

〇Kosuke Hatta1, Takayuki Mori1, Hiroshi Oka2, Takahiro Mori2, Jiro Ida1 (1.Kanazawa Inst. of Tech., 2.AIST)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)English Presentation

[14a-K101-7]Comparative Analysis of Threshold Voltage and On-current Variability in 65nm Bulk and FDSOI MOSFETs at Cryogenic Temperature

〇(DC)Zihao Liu1, Tomoko Mizutani1, Kiyoshi Takeuchi1, Takuya Saraya1, Hiroshi Oka2, Takahiro Mori2, Masaharu Kobayashi1, Toshiro Hiramoto1 (1.The Univ. of Tokyo, 2.AIST)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)English Presentation

[14a-K101-8]On-Current Variability Components in 65nm Bulk and FDSOI MOSFETs at Cryogenic Temperature

〇(DC)Zihao Liu1, Tomoko Mizutani1, Kiyoshi Takeuchi1, Takuya Saraya1, Hiroshi Oka2, Takahiro Mori2, Masaharu Kobayashi1, Toshiro Hiramoto1 (1.The Univ. of Tokyo, 2.AIST)
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11:45 AM - 12:00 PM JST(2:45 AM - 3:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[14a-K101-9]Coulomb-scattering-limited mobility at cryogenic temperatures due to interface charges induced by Fowler-Nordheim injection in Si n-MOSFETs

〇(M2)Zhao Jin1, Yutong Chen1, Hiroshi Oka2, Takahiro Mori2, Mitsuru Takenaka1, Kasidit Toprasertpong1, Shinichi Takagi1 (1.The Univ. of Tokyo, 2.AIST)
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12:00 PM - 12:15 PM JST(3:00 AM - 3:15 AM UTC)

[14a-K101-10]Trial for Easing Cryogenic Model Parameter Extraction utilizing Generative AI

〇Takumi Inaba1, Yusuke Chiashi1, Hiroshi Oka1, Minoru Ogura1, Hidehiro Asai1, Hiroshi Fuketa1, Shota Iizuka1, Kimihiko Kato1, Shunsuke Shitakata1, Takahiro Mori1 (1.AIST)
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