[14a-K101-1~10] 13.5 Semiconductor devices/ Interconnect/ Integration technologies

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[14a-K101-6] Cryogenic 200nm SOI-FET Self-Heating and Thermal Conduction to Adjacent Devices

〇Kosuke Hatta¹, Takayuki Mori¹, Hiroshi Oka², Takahiro Mori², Jiro Ida¹ (1.Kanazawa Inst. of Tech., 2.AIST)

Keywords:

cryogenic temperatures,self heating,thermal conduction

In this study, self-heating in 200 nm SOI-FETs and thermal conduction to the adjacent devices at cryogenic temperatures were verified using the four-therminal gate resistance method. At cryogenic temperature, thermal generation phenomenon of the device, called self-heating, is caused more than when at room temperatures. In addition, this heat can't conduct to the adjacent devices which are at a distance of four gate pitches from the heat source.