Presentation Information

[14a-K101-8]On-Current Variability Components in 65nm Bulk and FDSOI MOSFETs at Cryogenic Temperature

〇(DC)Zihao Liu1, Tomoko Mizutani1, Kiyoshi Takeuchi1, Takuya Saraya1, Hiroshi Oka2, Takahiro Mori2, Masaharu Kobayashi1, Toshiro Hiramoto1 (1.The Univ. of Tokyo, 2.AIST)

Keywords:

cryogenic,variability decomposition

In this work, we carried out variability decomposition for cryogenic bulk and FDSOI devices in saturation region, and proposed a new scheme for decomposition. Results showed high influence by threshold voltage variability in both devices at cryogenic temperature, but mild transconductance variability. The reasons are discussed.

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