[14a-K101-1~10] 13.5 デバイス／配線／集積化技術

11:30 〜 11:45英語発表

[14a-K101-8] On-Current Variability Components in 65nm Bulk and FDSOI MOSFETs at Cryogenic Temperature

〇(DC)Zihao Liu¹, Tomoko Mizutani¹, Kiyoshi Takeuchi¹, Takuya Saraya¹, Hiroshi Oka², Takahiro Mori², Masaharu Kobayashi¹, Toshiro Hiramoto¹ (1.The Univ. of Tokyo, 2.AIST)

キーワード：

cryogenic、variability decomposition

In this work, we carried out variability decomposition for cryogenic bulk and FDSOI devices in saturation region, and proposed a new scheme for decomposition. Results showed high influence by threshold voltage variability in both devices at cryogenic temperature, but mild transconductance variability. The reasons are discussed.