[14a-K210-1~9] 13.2 Exploratory Materials, Physical Properties, Devices

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[14a-K210-5] Fabrication of Mg₂Si-PD linear array for SWIR image sensor (II)

〇Ryosuke Furuta¹, Kaito Ojima¹, Hideto Takei¹, Hibiki Katumata¹, Syunya Sakane¹, Haruhiko Udono¹ (1.Ibaraki Univ.)

Keywords:

Mg2Si,SWIR,Image sensor

In this study, fabrication conditions and miniaturisation issues for multipixel PD linear arrays on Mg₂Si substrates were investigated and physical properties were evaluated, with the aim of creating a general-purpose SWIR image sensor.The fabricated devices were subjected to I-V and spectral sensitivity measurements, which confirmed rectifiability at all electrodes and light-receiving sensitivity comparable to that of conventional single PDs.The results of more detailed electrical and optical property evaluations and problems with miniaturisation will be reported on the same day.