The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation13 Semiconductors : 13.2 Exploratory Materials, Physical Properties, Devices

[14a-K210-1~9]13.2 Exploratory Materials, Physical Properties, Devices

Fri. Mar 14, 2025 9:00 AM - 11:30 AM JST
Fri. Mar 14, 2025 12:00 AM - 2:30 AM UTC
K210 (Lecture Hall Bldg.)
Tetsuji Kume(Gifu University), Shunya Sakane(Ibaraki University)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[14a-K210-1]Ca substitution effects on thermoelectric properties in SrSi2

〇Motoharu Imai1 (1.NIMS)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[14a-K210-2]Transport properties of the single crystals InGaO3(ZnO)n via thermoelectric properties

〇Naoki Kase1, Hayaki Mineo1, Maya Yoshida1, Tadahito Inoue1, Yuto Uruma1, Yusuke Kawamura1, Nobuaki Miyakawa1 (1.Tokyo Univ. of Sci.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[14a-K210-3]Thermal conductivity measurement of Mg2Si thermoelectric materials under high pressure

〇YOSHIHISA Mori1,2, RYO Okami2, YUKA Akimoto1, Takashi Yoshino3 (1.Okayama Univ. of Sci, 2.Okayama Univ of Sci, 3.Okayama Univ.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[14a-K210-4]Phonon Dynamics Analysis of Mg2Si through Raman Spectroscopy and First-Principles Calculations

〇Kosuke Shimano1, Takehiro Ota2, Kenichiro Takakura2, Shunya Sakane1, Haruhiko Udono1 (1.Ibaraki Univ., 2.Kumamoto KOSEN)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[14a-K210-5]Fabrication of Mg2Si-PD linear array for SWIR image sensor (II)

〇Ryosuke Furuta1, Kaito Ojima1, Hideto Takei1, Hibiki Katumata1, Syunya Sakane1, Haruhiko Udono1 (1.Ibaraki Univ.)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[14a-K210-6]Synthesis and characterization of In/Cu doped ternary Ge clathrate films

〇(M1)Koji Yasuoka1, Tun Naing Aye2, Rahul Kumar3, Himanshu S. Jha1,2, Fumitaka Ohashi1,2, Tetsuji Kume1,2 (1.GNST, Gifu Univ., 2.Faculty of Engineering, Gifu Univ., 3.NIT, Gifu College.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[14a-K210-7]Synthesis of SiGe alloy clathrate films with Ge coated Si substrate

〇(M2)Kengo Nishio1, Himanshu. S Jha1, Fumitaka Ohashi1, Tetuji Kume1,2 (1.GNST. Gifu Univ., 2.FE. Gifu Univ.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[14a-K210-8]Optimization of topological insulator Bi2Se3/CdSe/Bi2Se3 growth conditions

〇Yuta Yamagata1, Yuto Hiura1, Yoshikazu Terai1 (1.Kyushu Inst. of Tech.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)English Presentation

[14a-K210-9]Observation of band structure in Bi-MoS2 contacts

〇Ruihan Wang1 (1.Science Tokyo)
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