[14a-K306-1~10] 15.7 Crystal characterization, impurities and crystal defects

11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[14a-K306-10] Quantitative Imaging of Residual Strain in Commercial Off-Axis SiC Wafers

〇Yuta Kimura¹, Nao Arai¹, Naoto Tsuji¹, Ryoya Watanabe¹, Masayuki Fukuzawa¹ (1.Kyoto Institute of Technology)

Keywords:

SiC,residual strain,photoelastic technique

With the expansion of commercial large-diameter SiC wafers, it has become important to characterize the residual strains with photoelastic technique, but the natural birefringence in the off-axis wafer was still an obstacle. In this study, we developed an imaging polariscope that can suppress natural birefringence by using a collimated probing light and a wafer-tilting mechanism, and characterized off-axis commercial 4H-SiC wafers. The quantitative distribution of residual strain was selectively obtained by optimizing the incident angle so that the probing light propagates parallel to the c-axis.