The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation15 Crystal Engineering : 15.7 Crystal characterization, impurities and crystal defects

[14a-K306-1~10]15.7 Crystal characterization, impurities and crystal defects

Fri. Mar 14, 2025 9:00 AM - 11:45 AM JST
Fri. Mar 14, 2025 12:00 AM - 2:45 AM UTC
K306 (Lecture Hall Bldg.)
Hidetoshi Suzuki(Miyazaki Univ.), Kazuhisa Torigoe(SUMCO), Eiji Kamiyama(GlobalWafers Japan)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[14a-K306-1]Metallic impurities gettering behavior of Hydrocarbon Molecular Ion Implantation Epitaxial Silicon Wafer during the pn-junction diode fabrication process

〇Sho Nagatomo1, Takeshi Kadono1, Ryo Hirose1, Koji Kobayashi1, Shun Sasaki1, Kazunari Kurita1 (1.SUMCO CORPORATION)
Comment()
9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[14a-K306-2]Development of CH2F molecular ion implanted silicon epitaxial wafer

〇Ryo Hirose1, Takeshi Kadono1, Koji Kobayashi1, Sho Nagatomo1, Kazunari Kurita1 (1.SUMCO CORPORATION)
Comment()
9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14a-K306-3]Study on Dislocation Propagation in 300mm Si Wafer during IGBTs High Thermal Budget Process

〇(D)Jiuyang Yuan1, Bozhou Cai1, Yoshiji Miyamura2, Wataru Saito2, Shin-ichi Nishizawa2 (1.Kyushu Univ. IGSES, 2.Kyushu Univ. RIAM)
Comment()
9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[14a-K306-4]Evaluation of the Minority Carrier Lifetime in Si Wafers for IGBT and Analysis with Device Operating Temperature

〇(M2)Ruixuan Cao1, Jiuyang Yuan1, Bozhou Cai1, Yoshiji Miyamura2, Wataru Saito2, Shin-ichi Nishizawa2 (1.Kyushu Univ. IGSES, 2.Kyushu Univ. RIAM)
Comment()
10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[14a-K306-5]Formation of p-type layers with lithium-related defects in silicon

〇AKIRA KIYOI1, NAOYUKI KAWABATA1 (1.Mitsubishi Electric Corp.)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14a-K306-6]Molecular Dynamics Simulation of SiGe by Using Machine Learning Potential

〇Kei Ikeda1 (1.Mitsubishi Chemical Corporation)
Comment()
10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[14a-K306-7]The effect of segregation on temperature distribution during VB-Ga2O3 growth

〇Koichi Kakimoto1, Taketoshi Tomida2, Vladimir Kochurikhin2, Masanori Kitahara2, Kei Kamada1,2, Satoshi Nakano3, Akira Yoshikawa1,2,4 (1.NICHe, Tohoku Univ., 2.C & A co., 3.RIAM, Kyushu Univ., 4.IMR, Tohoku Univ.)
Comment()
11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[14a-K306-8]Impurity dependence of polytypic analysis of SiC grown by TSSG method
by 2-D nucleation theory

〇Koichi Kakimoto1, Satoshi Nakano2 (1.NICHe, Tohoku Univ., 2.RIAM, Kyushu Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[14a-K306-9]Classification of basal plane dislocation structures to the expansion shapes of single Shockley-type stacking faults in 4H-SiC

〇Johji Nishio1, Chiharu Ota1 (1.Toshiba R&D Center)
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11:30 AM - 11:45 AM JST(2:30 AM - 2:45 AM UTC)

[14a-K306-10]Quantitative Imaging of Residual Strain in Commercial Off-Axis SiC Wafers

〇Yuta Kimura1, Nao Arai1, Naoto Tsuji1, Ryoya Watanabe1, Masayuki Fukuzawa1 (1.Kyoto Institute of Technology)
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