[14a-K306-1~10] 15.7 Crystal characterization, impurities and crystal defects

9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14a-K306-3] Study on Dislocation Propagation in 300mm Si Wafer during IGBTs High Thermal Budget Process

〇(D)Jiuyang Yuan¹, Bozhou Cai¹, Yoshiji Miyamura², Wataru Saito², Shin-ichi Nishizawa² (1.Kyushu Univ. IGSES, 2.Kyushu Univ. RIAM)

Keywords:

dislocation propagation,silicon wafer,high thermal budget process

In the IGBT fabrication process, thermal stress can lead to the dislocation propagation, potentially degrading device performance. Since it is difficult to measure temperature distribution, stress, and dislocation density during the process, it is essential to identify the factors and timing of dislocation generation. In this study, we numerically calculated the temperature distribution, stress, and dislocation density caused by temperature non-uniformity in 300 mm Si wafer. The results were validated through experiments using an actual furnace, clarifying the mechanism of dislocation propagation.