[14a-K306-1~10] 15.7 Crystal characterization, impurities and crystal defects

9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[14a-K306-4] Evaluation of the Minority Carrier Lifetime in Si Wafers for IGBT and Analysis with Device Operating Temperature

〇(M2)Ruixuan Cao¹, Jiuyang Yuan¹, Bozhou Cai¹, Yoshiji Miyamura², Wataru Saito², Shin-ichi Nishizawa² (1.Kyushu Univ. IGSES, 2.Kyushu Univ. RIAM)

Keywords:

lifetime

In recent years, IGBTs have become indispensable in the field of power control, and their reliability in high-temperature environments has become increasingly important. To understand how temperature fluctuations affect the lifetime of IGBTs, this study measures the minority carrier lifetime of Si wafers for IGBTs under conditions that simulate the actual device operating temperature (from room temperature to 200°C). Through these measurements, we clarify the correlation between changes in lifetime and device operating temperature.