[14a-K306-1~10] 15.7 Crystal characterization, impurities and crystal defects

10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[14a-K306-5] Formation of p-type layers with lithium-related defects in silicon

〇AKIRA KIYOI¹, NAOYUKI KAWABATA¹ (1.Mitsubishi Electric Corp.)

Keywords:

semiconductor,point defect,doping

We demonstrate a shallow-acceptor defect formation in Si by performing lithium-ion irradiation and thermal annealing. Comparative studies with hydrogen, helium and lithium irradiations revealed that the p-type conductivity primarily attributed to a combination of intrinsic defects and lithium-related defect complexes. This approach potentially poses a limitation in the versatile application of light ion irradiation techniques, particularly for achieving p-type conductivity and is beneficial on device fabrications such as in the context of a lower temperature activation and wider penetration depth than the implantation of basic dopants.