Presentation Information
[14a-K306-7]The effect of segregation on temperature distribution during VB-Ga2O3 growth
〇Koichi Kakimoto1, Taketoshi Tomida2, Vladimir Kochurikhin2, Masanori Kitahara2, Kei Kamada1,2, Satoshi Nakano3, Akira Yoshikawa1,2,4 (1.NICHe, Tohoku Univ., 2.C & A co., 3.RIAM, Kyushu Univ., 4.IMR, Tohoku Univ.)
Keywords:
semiconductor,oxide,simulation
We calculated distributions of temperature and velocity of Ga2O3 by using a vertical Bridgman method by taking into account segregation of impurity. The segregation affects distributions of temperature and velocity in the crystal and the melt.
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