[14a-K306-1~10] 15.7 Crystal characterization, impurities and crystal defects

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[14a-K306-7] The effect of segregation on temperature distribution during VB-Ga₂O₃ growth

〇Koichi Kakimoto¹, Taketoshi Tomida², Vladimir Kochurikhin², Masanori Kitahara², Kei Kamada^1,2, Satoshi Nakano³, Akira Yoshikawa^1,2,4 (1.NICHe, Tohoku Univ., 2.C & A co., 3.RIAM, Kyushu Univ., 4.IMR, Tohoku Univ.)

Keywords:

semiconductor,oxide,simulation

We calculated distributions of temperature and velocity of Ga2O3 by using a vertical Bridgman method by taking into account segregation of impurity. The segregation affects distributions of temperature and velocity in the crystal and the melt.