[14a-K306-1~10] 15.7 Crystal characterization, impurities and crystal defects

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[14a-K306-8] Impurity dependence of polytypic analysis of SiC grown by TSSG method
by 2-D nucleation theory

〇Koichi Kakimoto¹, Satoshi Nakano² (1.NICHe, Tohoku Univ., 2.RIAM, Kyushu Univ.)

Keywords:

semiconductor,SiC,simulation

We calculated 2D nucleation energy of 3C- and 4H polytypes of SiC grown by TSSG methd. SiC polytype can be obtained by nitrogen doping and high super saturation of carbon.