[14a-K306-1~10] 15.7 Crystal characterization, impurities and crystal defects

11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[14a-K306-9] Classification of basal plane dislocation structures to the expansion shapes of single Shockley-type stacking faults in 4H-SiC

〇Johji Nishio¹, Chiharu Ota¹ (1.Toshiba R&D Center)

Keywords:

silicon carbide,single Shockley-type stacking fault,partial dislocation