[14a-K401-1~9] 15.4 III-V-group nitride crystals

9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14a-K401-2] Emission Characteristics of GaN Stripe Structures Fabricated by Hydrogen Atmosphere Anisotropic Thermal Etching (HEATE) Method

〇Seiichi Kataoka¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Semiconductor Research Inst.)

Keywords:

Gallium Nitride,Strain relaxation