The 72nd JSAP Spring Meeting 2025
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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[14a-K401-1~9]15.4 III-V-group nitride crystals

Fri. Mar 14, 2025 9:00 AM - 11:30 AM JST
Fri. Mar 14, 2025 12:00 AM - 2:30 AM UTC
K401 (Lecture Hall Bldg.)
Shuhei Ichikawa(Osaka Univ.), Masato Oda(Wakayama Univ.)
9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14a-K401-1]Research of surface morphology change by electrochemical etching of n+-GaN

〇Sogo Yokoi1, Shigeyoshi Usami1, Masayuki Imanishi1, Tomoaki Sumi2, Junichi Takino2, Yoshio Okayama2, Ryota Ito3, Masahiko Hata4, Atsushi Tanaka5, Yoshio Honda5, Hiroshi Amano5, Mihoko Maruyama1, Masashi Yoshimura6, Yusuke Mori1 (1.Osaka Univ., 2.Panasonic Holdings Corp., 3.Sumitomo Chemical Co., Ltd., 4.Itochu Plastics Inc., 5.IMaSS Nagoya Univ., 6.ILE, Osaka Univ.)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14a-K401-2]Emission Characteristics of GaN Stripe Structures Fabricated by Hydrogen Atmosphere Anisotropic Thermal Etching (HEATE) Method

〇Seiichi Kataoka1, Akihiko Kikuchi1,2 (1.Sophia Univ., 2.Sophia Semiconductor Research Inst.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[14a-K401-3]Formation and optical characteristics of AlGaN:Tb/GaN core-shell nanowires grown by organometallic vapor phase epitaxy

〇Jun Tatebayashi1,2, Takuma Yoshimura1, Kazuhisa Sato3, Shuhei Ichikawa1,3, Yasufumi Fujiwara4,5 (1.Osaka Univ., 2.QIQB, 3.UHVEM, 4.Sanken, 5.Ritsumeikan Univ.)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[14a-K401-4]Crystal Truncation Rod Scattering in X-ray Nanobeam Diffraction of GaN Nanowires and GaN-based Multi-quantum Shells and its Application to Structural Analysis

〇Takao Miyajima1, Shoya Ota1, Ryota Kobayashi1, Tsurugi Kondo1, Kazushi Sumitani2, Yasuhiro Imai2, Shigeru Kimura2, Nobuhiro Yasuda2, Tomoyo Nakao3, Shigeo Arai3, Satoshi Kamiyama1, Daichi Imai1 (1.Meijo Univ., 2.JASRI, 3.Nagoya Univ.)
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10:00 AM - 10:15 AM JST(1:00 AM - 1:15 AM UTC)

[14a-K401-5]Surface recombination and carrier dynamics in blue-emitting InGaN/GaN nanopillars

Shunya Kosuge1, Takeki Aikawa2, Umito Kurabe2, Akihiko Kikuchi2,3, 〇Takao Oto1 (1.Yamagata Univ., 2.Sophia Univ., 3.Sophia Semicon.)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[14a-K401-6]Theoretical investigation on exciton energy level splitting in AlN under static magnetic field

〇Takumi Ikeshima1, Ryota Ishii1, Mitsuru Funato1, Yoichi Kawakami1 (1.Kyoto Univ.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[14a-K401-7]Theoretical study for adsorption behavior of various types of atoms on AlN(0001) surface with kinks and steps

〇Toru Akiyama1, Takahiro Kawamura1 (1.Mie Univ.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14a-K401-8]Comparison of electronic states of fluorine and hydrogen termination of a point defect inside gallium nitride crystals

〇(M1)Yuki Fujishiro1, Tomoe Yayama1, Takahiro Nagata2, Toyohiro Chikyow2, Fumiko Akagi1 (1.Kogakuin Univ., 2.NIMS)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[14a-K401-9]Nonradiative relaxation process of the careers to acceptor level in hole-doped GaN by carbon substitution

〇Tomoe Yayama1, Yoshiyuki Miyamoto2 (1.Kogakuin Univ., 2.AIST)
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