[14a-K401-1~9] 15.4 III-V-group nitride crystals

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[14a-K401-3] Formation and optical characteristics of AlGaN:Tb/GaN core-shell nanowires grown by organometallic vapor phase epitaxy

〇Jun Tatebayashi^1,2, Takuma Yoshimura¹, Kazuhisa Sato³, Shuhei Ichikawa^1,3, Yasufumi Fujiwara^4,5 (1.Osaka Univ., 2.QIQB, 3.UHVEM, 4.Sanken, 5.Ritsumeikan Univ.)

Keywords:

nanowires,AlGaN:Tb,RGB three-primary colors

We report on the growth and optical/structural characteristics of Al_xGa_1-xN:Tb/GaN core-shell NWs grown by organometallic vapor phase epitaxy. AlGaN:Tb layers are formed on the GaN NWs in a core-shell manner, which is clarified by the cross-sectional transmission electron microscope characterization equipping energy dispersive X-ray spectroscopy (EDS). Room-temperature, Tb³⁺-related visible luminescence is observed simultaneously at blue (∼490 nm), green (∼550 nm), yellow (∼580 nm), and red (∼620 nm) regimes, which are assigned as the ⁵D₄-⁷F₆, ⁵D₄-⁷F₅, ⁵D₄-⁷F₄, and ⁵D₄-⁷F₃ transitions, respectively. Such Tb luminescence becomes strong with an Al composition of the Al_xGa_1-xN host, and shows the strongest peak intensity when Tb³⁺ ions are doped in the Al_0.6Ga_0.4N shell layers whose Al composition is quantified by the EDS elemental mapping characterization.