[14a-P02-1~6] 7 Beam Technology and Nanofabrication (Poster)

[14a-P02-5] Improvement of sensitivity characteristics of negative electron beam resist
by UVC irradiation

〇Shigeo Tamura¹, Yasuyuki Miyamoto^1,2 (1.Science Tokyo,FIRST, 2.Science Tokyo)

Keywords:

electron beam lithography,negative resist,UVC

Electron beam lithography for microfabrication requires high acceleration voltages to focus the beam diameter to a few nanometers. However, acceleration voltage and resist sensitivity are contradictory.In order to improve the sensitivity characteristics, negative resist was exposed to electron beam lithography at an acceleration voltage of 100 kV followed by UVC irradiation at a wavelength of 255 nm, which reduced the amount of exposure required for resolution and improved the γ value.