[14p-K210-1~9] 13.2 Exploratory Materials, Physical Properties, Devices

1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K210-2] Infrared photosensitive properties of epitaxial Mg₃Sb₂ thin films fabricated on Si(001) substrates

〇Nozomu Kiridoshi¹, Akito Ayukawa¹, Koki Nejo¹, Takeru Kuriyama¹, Wakaba Yamamoto², Akira Yasuhara², Kohei Sato², Haruhiko Udono¹, Shunya Sakane¹ (1.Ibaraki Univ., 2.JEOL)

Keywords:

thin film

To investigate the infrared photodetection properties of Mg₃Sb₂ thin films, films were grown on Si(001) substrates using the molecular beam epitaxy (MBE) method. Analysis using RHEED, XRD, and STEM revealed epitaxial growth with c-plane orientation. Current-voltage characteristics indicated the formation of a p-n junction between p-type Mg₃Sb₂ and n-type Si substrates. The films demonstrated clear photoresponse under infrared LED illumination, and spectral sensitivity measurements in the 1000–2200 nm range suggested their potential application in infrared photodetection devices.