The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation13 Semiconductors : 13.2 Exploratory Materials, Physical Properties, Devices

[14p-K210-1~9]13.2 Exploratory Materials, Physical Properties, Devices

Fri. Mar 14, 2025 1:30 PM - 4:00 PM JST
Fri. Mar 14, 2025 4:30 AM - 7:00 AM UTC
K210 (Lecture Hall Bldg.)
Yoshikazu Terai(Kyushu Inst. of Tech.), Kosuke Hara(NAIST)
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[14p-K210-1][The 57th Young Scientist Presentation Award Speech] Epitaxial growth of AgBa2Si3 films for thermoelectric applications and search for low temperature deposition conditions

〇Kimimaru Kajihara1, Takamitsu Ishiyama1, Kaoru Toko1, Yoichiro Koda2, Masami Mesuda2, Shuta Honda3, Takashi Suemasu1 (1.Univ. of Tsukuba, 2.Tosoh Corporation, 3.Kansai Univ.)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K210-2]Infrared photosensitive properties of epitaxial Mg3Sb2 thin films fabricated on Si(001) substrates

〇Nozomu Kiridoshi1, Akito Ayukawa1, Koki Nejo1, Takeru Kuriyama1, Wakaba Yamamoto2, Akira Yasuhara2, Kohei Sato2, Haruhiko Udono1, Shunya Sakane1 (1.Ibaraki Univ., 2.JEOL)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[14p-K210-3]Effectiveness of BaSi2 thermal evaporation using a machine learning model and MgO barrier layer

Takaharu Nakanishi1, Ryuto Ueda1, Junji Yamanaka1, Keisuke Arimoto1, 〇Kosuke Hara1 (1.Univ. Yamanashi)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[14p-K210-4]Evaluation of HTL/BaSi2 structure fabrication for application to BaSi2 solar cells

〇Yuka Fukaya1, Nurfauzi Abdillah1, Kaoru Toko1, Takashi suemasu1 (1.Univ. Tsukuba)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[14p-K210-5]Evaluation of fundamental properties of HN-D2 for HTL application to BaSi2

〇Mizuki Hirai1, Yuka Fukaya1, Takeshi Yasuda2, Yoichiro Koda3, Masami Meshida3, Kaoru Toko1, Takashi Suemasu1 (1.Univ. Tsukuba, 2.NIMS, 3.Tosoh Corporation)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)English Presentation

[14p-K210-6]Investigation of sputter-deposited BaS films for hole transport layer of BaSi2 thin film solar cells.

〇Ammara Firdous1, Takumi Sato1, Koki Hayashi1, Nurfauzi Abdillah1, Yoichiro Koda2, Masami Mesuda2, Kaoru Toko1, Takashi Suemasu1 (1.Univ. Tsukuba, 2.Tosoh Corp.)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[14p-K210-7]Investigation of passivation layers for BaSi2 heterojunction solar cells

〇Koki Hayashi1, Takumi Sato1, Yuji Ishiguro1, Yoichiro Koda2, Masami Mesuda2, Kaoru Toko1, Takashi Suemasu1 (1.Univ. Tsukuba, 2.Tosoh Corp.)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[14p-K210-8]Investigation of HTL materials by simulation for BaSi2 hetero-junction solar cells

〇Yuji Ishiguro1, Takumi Sato1, Koki Hayashi1, Kaoru Toko1, Takashi Suemasu1 (1.Univ. Tsukuba)
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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[14p-K210-9]Dependence of spectral sensitivity on light incidence direction in n-Ru2Si3/p-Si heterojunction devices

〇Kohei Morimoto1, Yoshikazu Terai1 (1.Kyushu Inst. of Tech.)
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