[14p-K210-1~9] 13.2 Exploratory Materials, Physical Properties, Devices

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[14p-K210-9] Dependence of spectral sensitivity on light incidence direction in n-Ru₂Si₃/p-Si heterojunction devices

〇Kohei Morimoto¹, Yoshikazu Terai¹ (1.Kyushu Inst. of Tech.)

Keywords:

silicide semiconductor,spectral sensitivity,ruthenium silicide