[14p-K306-1~3] 15.7 Crystal characterization, impurities and crystal defects

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)

[14p-K306-1] Quality of silicon substrate and point defects: 2nd generation
(13) Effect of internal stress on point defects

〇Naohisa Inoue¹, Shuichi Kawamata¹, Shuichi Okuda¹ (1.Osaka Metropolitan Univ. Radiation Research Center)

Keywords:

silicon crystal,point defect,stress

In 1983, Abe et al. predicted the effect of stress due to temperature gradient in growing Si crystal on intrinsic point defect. In 1986, they found the interstitial or vacancy type microdefect in highly doped Si of either smaller or larger atom. In 1999, we theoretically analyzed these two internal stress effects on the type of microdefects. Equilibrium V concentration under compressive internal stress was derived. By fitting to the experimental result, it was shown that 0.1% increase of V or I produces V or I type defect. Axial internal stress temperature gradient at interface changing the concentration was derived. We used the relaxation volume. We used the reported E = 8.45MPa at melting point and obtained the increase of 0.006%. In 2013 E at 1400^oC was reported, 100 GPa. Using this, 0.1% increase of V is supplied when stress is 17.3 MPa. In 2014, experimental result was obtained. The estimated stress was around 10 MPa. Our prediction was experimentally confirmed.