[14p-K402-1~9] 15.6 Group IV Compound Semiconductors (SiC)

1:00 PM - 1:30 PM JST(4:00 AM - 4:30 AM UTC)

[14p-K402-1] [The 46th Paper Award Speech] Suppression of Stacking Fault Expansion in SiC Power Devices by High-Energy Ion Implantation

〇Shunta Harada¹, Hitoshi Sakane², Toshiki Mii³, Masashi Kato³ (1.Nagoya Univ., 2.SHI-ATEX, 3.Nagoya Inst. Tech.)

Keywords:

Silicon carbide (SiC),High-energy ion implantation,Forward degradation

Silicon carbide (SiC) is a promising power semiconductor material with excellent physical properties, but forward degradation caused by crystal defects remains a critical issue. In this talk, we will detail the effects and mechanisms of the Stacking Fault Knockdown by High Energy Ion Implantation (SF-KHII) method to suppress stacking fault expansion.