The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation15 Crystal Engineering : 15.6 Group IV Compound Semiconductors (SiC)

[14p-K402-1~9]15.6 Group IV Compound Semiconductors (SiC)

Fri. Mar 14, 2025 1:00 PM - 3:45 PM JST
Fri. Mar 14, 2025 4:00 AM - 6:45 AM UTC
K402 (Lecture Hall Bldg.)
Kazutoshi Kojima(AIST)
1:00 PM - 1:30 PM JST(4:00 AM - 4:30 AM UTC)

[14p-K402-1][The 46th Paper Award Speech] Suppression of Stacking Fault Expansion in SiC Power Devices by High-Energy Ion Implantation

〇Shunta Harada1, Hitoshi Sakane2, Toshiki Mii3, Masashi Kato3 (1.Nagoya Univ., 2.SHI-ATEX, 3.Nagoya Inst. Tech.)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K402-2]Dislocation Dynamics Analysis for Contraction of Basal Plane Dislocations near the surface in 4H-SiC

〇Atsuo Hirano1, Noboru Takahashi1, Akiyuki Takahashi1 (1.Tokyo Univ. of Sci.)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K402-3]Application of Bayesian Inference in Capacitance Transient Analysis for Characterization of Deep Levels

〇(B)Kotaro Yamanaka1, Tsunenobu Kimoto1, Mitsuaki Kaneko1 (1.Kyoto Univ.)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[14p-K402-4]Lifetime mapping and decay curve analysis around defects on 4H-SiC wafer using µ-PCD measurement

〇Takumi Wakabayashi1, Kazushi Hayashi2, Hideo Fujii2, Takayuki Hirano3, Naoki Okano3, Junji Senzaki1 (1.AIST, 2.Kobe Steel, LTD., 3.Kobelco Res. Inst.)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K402-5]Study on improvement of fluorescent 4H-SiC porous processing conditions by voltage controlled anodic oxidation

〇(M1)Naoki Takahashi1, Taisei Mizuno1, Shouta Akiyoshi1, Takuma Ban1, Satoshi Kamiyama1, Tetsuya Takeuchi1, Motoaki Iwaya1, Atsushi Suzuki2, Eri Akazawa2, Yiyu Ou3, Haiyan Ou3 (1.Meijo Univ., 2.E&E Evolution Corp, 3.Technical Univ.Denmark)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[14p-K402-6]Control of emission intensity of SiC/SiO2 interfacial single-photon sources using ITO transparent conducting film

〇(M2)RYUTA MUTO1,2, Kazuya Harii2, Maki Shimizu1, Kanta Kibishi3, Yuya Yasaki3, Shinya Aikawa3, Takeshi Ohshima2,4, Yasuto Hijikata1 (1.Saitama Univ., 2.QST, 3.Kogakuin Univ., 4.Tohoku Univ.)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[14p-K402-7]Analysis of solvent inclusion and impurity concentration distribution in solution growth of p-type 4H-SiC

〇Takahiro Ito1, Kentaro Kutsukake1,2, Shunta Harada1,2, Toru Ujihara1,2 (1.Grad. Sch. Eng., Nagoya Univ., 2.IMaSS Nagoya Univ.)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[14p-K402-8]Off-cut Angle Dependence of Crystalline Quality and Electric Properties in CVD-Grown Heavily Al-Doped p-Type 4H-SiC Epilayers with Al Concentration of 2.5×1019 cm-3

〇Atsuki Hidaka1, Tomoya Narita1, Mitsuhide Iwatsuki1, Hiromu Umeuchi1, Hideharu Matsuura1, Shiyang Ji2, Kazuma Eto2, Kazutoshi Kojima2, Tomohisa Kato2, Sadafumi Yoshida2 (1.OECU, 2.AIST)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[14p-K402-9]Conduction Carriers in Nearest-Neighbor Hopping (NNH) Conduction in Al-Doped 4H-SiC~New Conduction Mechanism Model for NNH Conduction~

〇Tomoya Narita1, Mitsuhide Iwatsuki1, Atsuki Hidaka1, Hideharu Matsuura1, Shiyang Ji2, Kazuma Eto2, Kazuaki Kojima2, Tomohisa Kato2, Sadashi Yoshida2 (1.Osaka Electro-Communication Univ, 2.AIST)
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