[14p-K402-1~9] 15.6 Group IV Compound Semiconductors (SiC)

1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K402-2] Dislocation Dynamics Analysis for Contraction of Basal Plane Dislocations near the surface in 4H-SiC

〇Atsuo Hirano¹, Noboru Takahashi¹, Akiyuki Takahashi¹ (1.Tokyo Univ. of Sci.)

Keywords:

dislocation

We elucidate the movements of basal plane partial dislocations near the surface in 4H-SiC. We used dislocation dynamics, which allows us to simulate on a large scale and is based on the theory of elasticity and dislocation. Our result shows that partial dislocations can easily contract to a perfect dislocation as they approach the surface. Moreover, we clarified that the off-angle in the epitaxial process and the Burgers vectors of the partial dislocations affect the contraction of the partial dislocations.