[14p-K402-1~9] 15.6 Group IV Compound Semiconductors (SiC)

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K402-5] Study on improvement of fluorescent 4H-SiC porous processing conditions by voltage controlled anodic oxidation

〇(M1)Naoki Takahashi¹, Taisei Mizuno¹, Shouta Akiyoshi¹, Takuma Ban¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Atsushi Suzuki², Eri Akazawa², Yiyu Ou³, Haiyan Ou³ (1.Meijo Univ., 2.E&E Evolution Corp, 3.Technical Univ.Denmark)

Keywords:

semiconductor

A material in which B・N is doped into SiC is called fluorescent SiC and emits light at a wavelength of 580 nm. By etching the crystal surface with an anodic oxidation method and forming a porous layer, a shorter wavelength emission of 460 nm can be obtained. These two emissions provide a broad white light. Since the formation of the porous layer depends on the amount of charge, current density and oxidation time are important factors. In this study, we attempted to optimize the current density and oxidation time through voltage control.