[14p-K402-1~9] 15.6 Group IV Compound Semiconductors (SiC)

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[14p-K402-6] Control of emission intensity of SiC/SiO₂ interfacial single-photon sources using ITO transparent conducting film

〇(M2)RYUTA MUTO^1,2, Kazuya Harii², Maki Shimizu¹, Kanta Kibishi³, Yuya Yasaki³, Shinya Aikawa³, Takeshi Ohshima^2,4, Yasuto Hijikata¹ (1.Saitama Univ., 2.QST, 3.Kogakuin Univ., 4.Tohoku Univ.)

Keywords:

SiC,Single Photon Source,Crystal defects

Crystal defects formed at the interface of thermally oxidized SiC substrates are known as electrically controllable single-photon sources (SPSs) that operate at room temperature. But the electrical properties of surface SPSs have not been systematically investigated. In this study, we systematically investigated the dependence of luminescence intensity on electric field strength in surface SPSs directly under the gate electrode by using a transparent conductive film as the electrode. As a result, we found that almost all surface SPSs can be controlled on/off by a voltage within ±10 V.