[14p-K402-1~9] 15.6 Group IV Compound Semiconductors (SiC)

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[14p-K402-8] Off-cut Angle Dependence of Crystalline Quality and Electric Properties in CVD-Grown Heavily Al-Doped p-Type 4H-SiC Epilayers with Al Concentration of 2.5×10¹⁹ cm^-3

〇Atsuki Hidaka¹, Tomoya Narita¹, Mitsuhide Iwatsuki¹, Hiromu Umeuchi¹, Hideharu Matsuura¹, Shiyang Ji², Kazuma Eto², Kazutoshi Kojima², Tomohisa Kato², Sadafumi Yoshida² (1.OECU, 2.AIST)

Keywords:

off-cut angle dependence,activation energy,crystalline quality

In p-type 4H-SiC with an Al concentration of 2.5×10¹⁹ cm^-3, conduction with an extremely low activation energy of resistivity (approximately 5 meV), which is referred to as X conduction, was observed at low temperatures in all CVD epitaxial films with off-cut angles of 2°, 4°, and 8° toward [11-20] against (0001)-oriented 4H-SiC. It was found that their activation energy and the temperature range of the X conduction region showed no dependence on the off-cut angle, while the resistivity value exhibited an off-cut angle dependence. Furthermore, as the off-cut angle increased from 2° to 8°, it was found that the fluctuation in the lattice constant of the C-plane (i.e., (0001)-plane) decreased in Al-doped samples but increased in N-co-doped samples.