[14p-K403-1~13] 6.2 Carbon-based thin films

3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[14p-K403-10] Fabrication of diamond MOS structure using SiO₂/Al₂O₃ bilayer thin film (2)

Ryuichi Nakagawa¹, Taichi Saito¹, Tsubasa Matsumoto¹, Norio Tokuda¹, 〇Takeshi Kawae¹ (1.Kanazawa Univ.)

Keywords:

diamond,MOS structure