The 72nd JSAP Spring Meeting 2025
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Session Details

Oral presentation6 Thin Films and Surfaces : 6.2 Carbon-based thin films

[14p-K403-1~13]6.2 Carbon-based thin films

Fri. Mar 14, 2025 1:00 PM - 4:45 PM JST
Fri. Mar 14, 2025 4:00 AM - 7:45 AM UTC
K403 (Lecture Hall Bldg.)
Hideaki Yamada(AIST), Yuki Katamune(KIT), Kimiyoshi Ichikawa(Kanazawa Univ.)
1:00 PM - 1:15 PM JST(4:00 AM - 4:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K403-1]3-inch Ir/Sapphire Substrate for Large-Area Diamond Wafer Growth and
its Misorientation Effect

〇(D)Masahiro Tsuji1, Yuya Ide1, Saha Niloy1, Masanori Eguchi2, Makoto Kasu1 (1.Saga Univ., 2.Synchrotron Research center, Saga Univ.)
Comment()
1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[14p-K403-2]Free-standing large area (111) diamond crystal growth

〇Seongwoo Kim1, Yuki kawamata1, Kohei Hasebe1, Akira Sada1, Jeffery Ang1, Koji Koyama1, Mariko Suzuki1, Osamu Maida2 (1.Orbray Co., Ltd., 2.Osaka Univ.)
Comment()
1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K403-3]Formation of Diamond Trench {111} Flat Sidewalls by Thermochemical Etching

〇Masatsugu Nagai1, Tsubasa Matsumoto2, Satoshi Yamasaki2, Norio Tokuda2, Moriyoshi Haruyama1, Yukako Kato1, Hironori Yoshioka1, Hitoshi Umezawa1, Hiromitsu Kato1, Masahiko Ogura1, Daisuke Takeuchi1, Yoshiyuki Miyamoto1, Toshiharu Makino1 (1.AIST, 2.Kanazawa Univ.)
Comment()
1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)English Presentation

[14p-K403-4]DFT and Machine Learning Molecular Dynamics Study of Controlled Graphene Self-Assembly on the Diamond (111) Surface

〇(PC)JohnIsaac Guinto Enriquez1, Takahiro Yamasaki2, Masato Michiuchi2, Harry Handoko Halim1, Kouji Inagaki1, Masaaki Geshi1, Ikutaro Hamada1, Yoshitada Morikawa1 (1.Osaka Univ., 2.Sumitomo Elec. Ind.)
Comment()
2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K403-5]Detection of Solid Particles in Gas Phase of Diamond Chemical Vapor Deposition Environments using Laser Light Scattering

〇Kaishu Nitta1, Takehiro Shimaoka1, Hideaki Yamada1, Nobuteru Tsubouchi1, Akiyoshi Chayahara1, Yoshiaki Mokuno1 (1.AIST)
Comment()
2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K403-6]Deposition of diamond films by narrow-gap microwave plasma CVD

〇(M1)Rurii Higuchi1, Yuma Sakai1, Hiroaki Kakiuchi1, Hiromasa Ohmi1 (1.Osaka Univ.)
Comment()
2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K403-7]Growth of ultranano-crystalline diamond by 13.56 MHz inductively coupled plasma CVD method

〇Ryota Ando1, Satoru Nagamachi1, Natsuo Tatsumi1 (1.SEI, Ltd.)
Comment()
3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K403-8]Formation of nanocrystalline diamond film on thermally nitrided substrate by HF-CVD

〇AOI SHIOKAWA1, Yuki Miyahara1, Hirofumi Takikawa1, Takahiro Hattori2, Hiroaki Sugita2, Hiroki Gima2 (1.Toyohashi Univ. Technol, 2.OSG Co., Ltd)
Comment()
3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[14p-K403-9][The 57th Young Scientist Presentation Award Speech] Step-free diamond MOSFET fabrication by utilizing growth, doping, and surface/interface control

〇Kazuki Kobayashi1, Sato Kai1, Kato Hitomitsu2, Ogura Masahiko2, Makino Toshiharu2, Matsumoto Tsubasa1, Ichikawa Kimiyoshi1, Hayashi Kan1, Inokuma Takao1, Yamasaki Satoshi1, Christoph Nebel1,3, Tokuda Norio1 (1.Kanazawa Univ., 2.AIST, 3.Diacara)
Comment()
3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[14p-K403-10]Fabrication of diamond MOS structure using SiO2/Al2O3 bilayer thin film (2)

Ryuichi Nakagawa1, Taichi Saito1, Tsubasa Matsumoto1, Norio Tokuda1, 〇Takeshi Kawae1 (1.Kanazawa Univ.)
Comment()
4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

[14p-K403-11]Ion implantation of 7Be into a diamond thin film

〇Yasuto Miyake1, Hiroki Okuno1, Hideyuki Watanabe1,2 (1.RIKEN RNC, 2.AIST)
Comment()
4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)

[14p-K403-12]Formation of Low-Resistance Layer by High-Concentration B Ion Implantation
into Diamond

〇(M1)Kaiya Imamura1, Yuhei Seki1, Yasushi Hoshino1 (1.Kanagawa Univ.)
Comment()
4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[14p-K403-13]Conductivity conversion of the high-pressure high-temperature synthesized Ib-type diamond by B ion implantation

〇Yuhei Seki1, Kaiya Imamura1, Yasushi Hoshino1 (1.Kanagawa Univ.)
Comment()
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