[14p-K403-1~13] 6.2 Carbon-based thin films

1:15 PM - 1:30 PM JST(4:15 AM - 4:30 AM UTC)

[14p-K403-2] Free-standing large area (111) diamond crystal growth

〇Seongwoo Kim¹, Yuki kawamata¹, Kohei Hasebe¹, Akira Sada¹, Jeffery Ang¹, Koji Koyama¹, Mariko Suzuki¹, Osamu Maida² (1.Orbray Co., Ltd., 2.Osaka Univ.)

Keywords:

heteroepitaxial diamond,N-V Center,(111)diamond substrate

We achieved a free standing large area (111) heteroepitaxial Diamond crystal growth using a misoriented sapphire substrate. We will present the details regarding our growth methods as well as crystal quality during our talk.