[14p-K403-1~13] 6.2 Carbon-based thin films

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[14p-K403-9] [The 57th Young Scientist Presentation Award Speech] Step-free diamond MOSFET fabrication by utilizing growth, doping, and surface/interface control

〇Kazuki Kobayashi¹, Sato Kai¹, Kato Hitomitsu², Ogura Masahiko², Makino Toshiharu², Matsumoto Tsubasa¹, Ichikawa Kimiyoshi¹, Hayashi Kan¹, Inokuma Takao¹, Yamasaki Satoshi¹, Christoph Nebel^1,3, Tokuda Norio¹ (1.Kanazawa Univ., 2.AIST, 3.Diacara)

Keywords:

diamond,inversion channel MOSFET,interface

Our research group successfully demonstrated the operation of inversion channel diamond MOSFET in 2016. However, the field-effect mobility (µ_FE) of the fabricated MOSFETs is lower than the theoretical value of 3,000 cm²/Vs with a maximum of 20 cm²/Vs. The low mobility is attributed to the high interface state density (D_it) of 10¹³ cm^-2eV^-1 that occurs at the Al₂O₃/diamond interface. Since the interface state are believed to form mainly at the step edge, we fabricated p-type inversion channel diamond MOSFET with atomically flat Al₂O₃/diamond (111) interface using a proprietary process.