[14p-K503-1~17] CS.3 Code-sharing Session of 6.1 & 13.3 & 13.5

4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K503-12] Evaluation of distribution of multi-leakage paths generated on ferroelectric InZnO_x/Hf_0.5Zr_0.5O₂/TiN capacitors using laser-photoelectron emission microscopy

〇Yuki Itoya¹, Hirokazu Fujiwara^3,4, Bareille Cedric⁶, Shik Shin⁵, Toshiyuki Taniuchi^3,4, Masaharu Kobayashi^1,2 (1.IIS, 2.d.lab, 3.GSFS, 4.MIRC, 5.Univ. of Tokyo, 6.ISSP)

Keywords:

Ferroelectric material,Ferroelectric capacitor,Dielectric breakdown

Ferroelectric memory devices are promising for low-power, high-speed, and high-density applications. Among these, HfO₂-based ferroelectrics have gained attention for their CMOS compatibility but face challenges in polarization switching cycles, limited by leakage path formation and dielectric breakdown. Traditional models, such as the Weibull distribution, fail to fully explain leakage path behavior in these materials. To address this, we used Laser Photoelectron Emission Microscopy (Laser-PEEM) for in-situ observation of leakage paths in HfO₂-based capacitors with an InZnO_x/HfZrO_x/TiN structure. Voltage stress testing revealed nanoscale high photoelectron intensity spots, correlating with leakage current increases. Spatial analysis showed spots concentrated near electrode-induced edge steps and scattered distributions elsewhere. Weibull plots suggested edge-related early failures and surface-related fatigue. These findings highlight structural dependence in leakage path formation, offering new insights into dielectric breakdown mechanisms and advancing reliability predictions for ferroelectric devices.