The 72nd JSAP Spring Meeting 2025
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Oral presentationCS Code-sharing session : 【CS.3】Code-sharing Session of 6.1 & 13.3 & 13.5

[14p-K503-1~17]CS.3 Code-sharing Session of 6.1 & 13.3 & 13.5

Fri. Mar 14, 2025 1:00 PM - 5:45 PM JST
Fri. Mar 14, 2025 4:00 AM - 8:45 AM UTC
K503 (Lecture Hall Bldg.)
Shigehisa Shibayama(Nagoya Univ.), TOPRASERTPONG Kasidit(Univ. of Tokyo)
PR
SonySemiconductor
1:00 PM - 1:30 PM JST(4:00 AM - 4:30 AM UTC)

[14p-K503-1][The 2nd Kenji Natori Award Speech] Crystal structure control of HfO2-based ferroelectric materials by designing thin films and interfaces using atomic layer deposition

〇Takashi Onaya1 (1.GSFS, The Univ. of Tokyo)
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1:30 PM - 1:45 PM JST(4:30 AM - 4:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation AwardEnglish Presentation

[14p-K503-2]Impurity reduction in atomic-layer-deposited Hf0.5Zr0.5O2 thin films using H2O2 as an oxidant to enhance the crystallization at low temperature

〇Haoming Che1, Takashi Onaya1, Masaki Ishii2, Hiroshi Taka2, Koji Kita1 (1.GSFS, The Univ. of Tokyo, 2.Taiyo Nippon Sanso)
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1:45 PM - 2:00 PM JST(4:45 AM - 5:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K503-3]Important role of topmost ZrO2 layer on crystallization of HfO2/ZrO2 nanolaminate thin films

〇Rina Takahisa1, Takashi Onaya2, Koji Kita1,2 (1.School of Eng., The Univ. of Tokyo, 2.GSFS, The Univ. of Tokyo)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K503-4]Crystal structure and ferroelectric properties of rare-earth-doped epitaxial HfO2 thin films

〇(M1)Yutaro Tsuchiya1, Kohei Shimonosono1, Kazuki Okamoto1, Yukari Inoue2, Hiroshi Funakubo1 (1.Science Tokyo, 2.TDK Corporation)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[14p-K503-5]Ferroelectric properties of a co-doped HfO2-based ferroelectric YxNbxHf1-2xO2

〇Shutaro Asanuma1, Shinji Migita1, Hiroyuki Ota1, Yukinori Morita1, Shogo Hatayama1 (1.SFRC AIST)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[14p-K503-6]Effects of ultra-fast cooling in millisecond timescale on electrical properties of ferroelectric Al:HfO2 thin films

〇Yusuke Tani1, Tomoya Mifune2, Hideaki Tanimura1,2, Yuma Ueno1, Hironori Fujisawa2, Seiji Nakashima2, Ai Osaka2, Shinichi Kato1, Takumi Mikawa1 (1.SCREEN Semiconductor Solutions, 2.University of Hyogo)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[14p-K503-7]Fabrication and characterization of oxide/Y-HZO Stacked Structures by Solution Process

Yuzhong Wang1, Junewoo Choi1, 〇Eisuke Tokumitsu1 (1.JAIST)
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3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[14p-K503-8]Effects of stacking structures of ferroelectric Al:HfO2 thin films on electrical properties

〇Hideaki Tanimura1,2, Tomoya Mifune1, Yuma Ueno2, Yusuke Tani2, Hironori Fujisawa1, Seiji Nakashima1, Ai I. Osaka1, Shinichi Kato2, Takumi Mikawa2 (1.University of Hyogo, 2.SCREEN)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[14p-K503-9]Thickness dependence of Ec in ferroelectric HfO2 (iii)
- Comparison of Ec between orthorhombic and rhombohedral phases -

〇Akira Toriumi1, Shinji Migita2 (1.None, 2.AIST)
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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)

[14p-K503-10]On the intrinsic polarization switching time scale in LK equation

〇Akira Toriumi1, Shinji Migita2 (1.None, 2.AIST)
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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K503-11]Classical Molecular Dynamics Simulation of Ferroelectric Properties of a-HfO2

〇(B)Jumpei Ohba1, Kentaro Hirai1, Machika Naito1, Yusuke Nishimura1, Takanobu Watanabe1 (1.Waseda Univ.)
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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K503-12]Evaluation of distribution of multi-leakage paths generated on ferroelectric InZnOx/Hf0.5Zr0.5O2/TiN capacitors using laser-photoelectron emission microscopy

〇Yuki Itoya1, Hirokazu Fujiwara3,4, Bareille Cedric6, Shik Shin5, Toshiyuki Taniuchi3,4, Masaharu Kobayashi1,2 (1.IIS, 2.d.lab, 3.GSFS, 4.MIRC, 5.Univ. of Tokyo, 6.ISSP)
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4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[14p-K503-13]Analysis of trap level in Hf0.5Zr0.5O2 ferroelectric thin film with Poole-Frenkel model.

〇Saaya Kuroo1, Yosuke Watanabe1, Naonori Akae1, Kazuhiro Harada1, Yoshiro Hirose1, Eisuke Tokumitsu2 (1.KE Corp., 2.JAIST)
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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[14p-K503-14]Investigation of dielectric constant reduction mechanism in ferroelectric HfxZr1-xO2 MFIS capacitors after electric field application

〇Hiroyuki Matsukawa1, Zuocheng Cai1, Zhenhong Liu1, Mitsuru Takenaka1, Shinichi Takagi1, Kasidit Toprasertpong1 (1.Univ.Tokyo)
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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K503-15]Electric field and temperature dependence of wake-up characteristics and physical mechanisms in Hf0.5Zr0.5O2 thin-film ferroelectric capacitors

〇Kosuke Ito1, Mitsuru Takenaka1, Shinichi Takagi1, Kasidit Toprasertpong1 (1.Univ. Tokyo)
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5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)

[14p-K503-16]Evaluation of output classification characteristics of ferroelectric thin films for physical reservoir computing applications

〇Sota Inoue1, Yu Ukezeki1, Norifumi Fujimura1, Kasidit Toprasertpong2, Takagi Shinichi2, Takeshi Yoshimura1 (1.Osaka Metro. Univ., 2.The Univ. of Tokyo)
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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K503-17]Relationship between polarization states and computational performance in physical reservoir computing using ferroelectric-gate FETs Ⅱ

〇Yu Ukezeki1, Sota Inoue1, Hiroto Yamada1, Norifumi Fujimura1, Tokuji Yokomatsu2, Kensuke Kanda2, Kazusuke Maenaka2, Kasidit Toprasertpong3, Shinichi Takagi3, Takeshi Yoshimura1 (1.Osaka Merto. Univ., 2.University of Hyogo, 3.The Univ. of Tokyo)
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