[14p-K503-1~17] CS.3 Code-sharing Session of 6.1 & 13.3 & 13.5

4:30 PM - 4:45 PM JST(7:30 AM - 7:45 AM UTC)

[14p-K503-13] Analysis of trap level in Hf_0.5Zr_0.5O₂ ferroelectric thin film with Poole-Frenkel model.

〇Saaya Kuroo¹, Yosuke Watanabe¹, Naonori Akae¹, Kazuhiro Harada¹, Yoshiro Hirose¹, Eisuke Tokumitsu² (1.KE Corp., 2.JAIST)

Keywords:

semiconductor,ferroelectric,oxygen vacancy

HfZrO (HZO) thin film shows ferroelectric properties which promise resistive switching memory devices. It is thought that oxygen vacancy (Vo) is one of the main factors that determine physical/electrical properties of ferroelectric HZO. XPS is typically used to measure Vo qualitatively, but its validity still needs to be confirmed. This study aims to establish a quantitative evaluation method for Vo using electrical properties to overcome the challenges physical analyses have. We fabricated 6~9nm HZO thin film using the ALD process, analyzed the leakage current according to the Poole-Frenkel model, and gained the trap levels in the film. The trap level was 0.57eV from conduction band and it is equivalent to the reported activation energy of doubly charged oxygen vacancies.