[14p-K503-1~17] CS.3 Code-sharing Session of 6.1 & 13.3 & 13.5

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K503-15] Electric field and temperature dependence of wake-up characteristics and physical mechanisms in Hf_0.5Zr_0.5O₂ thin-film ferroelectric capacitors

〇Kosuke Ito¹, Mitsuru Takenaka¹, Shinichi Takagi¹, Kasidit Toprasertpong¹ (1.Univ. Tokyo)

Keywords:

ferroelectric,wake-up

HfO₂-based ferroelectrics, which are gaining attention as ferroelectric memory materials, face the challenge of the wake-up effect, requiring electric field cycling to induce ferroelectricity, especially in ultra-thin films below 6 nm. In this study, we measured the electric field and temperature dependence of the wake-up characteristics in Hf_0.5Zr_0.5O₂ (HZO) ferroelectric capacitors and discussed the underlying physical mechanisms.