[14p-K503-1~17] CS.3 Code-sharing Session of 6.1 & 13.3 & 13.5

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[14p-K503-4] Crystal structure and ferroelectric properties of rare-earth-doped epitaxial HfO₂ thin films

〇(M1)Yutaro Tsuchiya¹, Kohei Shimonosono¹, Kazuki Okamoto¹, Yukari Inoue², Hiroshi Funakubo¹ (1.Science Tokyo, 2.TDK Corporation)

Keywords:

ferroelectric,HfO2,PLD

Although many studies have been conducted on rare-earth-doped HfO₂ ferroelectric thin films, systematic investigations with consistent orientation and fabrication methods are limited. In this work, we fabricated (111)-oriented epitaxial HfO₂ thin films doped with various rare-earth elements and evaluated their crystal structures and ferroelectric properties.