[14p-K503-1~17] CS.3 Code-sharing Session of 6.1 & 13.3 & 13.5

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[14p-K503-7] Fabrication and characterization of oxide/Y-HZO Stacked Structures by Solution Process

Yuzhong Wang¹, Junewoo Choi¹, 〇Eisuke Tokumitsu¹ (1.JAIST)

Keywords:

ferroelectric thin films,HZO,solution process

CeOx, Y₂O₃, La₂O₃ top layer (8 nm)/Y-doped Hf-Zr-O (Y-HZO) (25 nm) stacked structures were fabricated by solution process and their electrical properties were evaluated. The CeOx/Y-HZO stacked structure exhibited good ferroelectric properties, whereas the Y₂O₃/Y-HZO and La₂O₃/Y-HZO stacked structures were paraelectric. This is probably because the Y₂O₃ and La₂O₃ top layers suppressed oxygen desorption from the Y-HZO layer.