[14p-P02-1~20] 6.4 Thin films and New materials

[14p-P02-18] Fe Concentration Dependence of Electrical, Optical, and Magnetic Properties of Epitaxially Grown Fe-doped ITO Films

〇Takumi Kado¹, Saiki Kitagawa^1,2,3, Haruka Kurihara¹, Toshihiro Nakamura^1,2 (1.Kyoto Univ., 2.ILAS, Kyoto Univ., 3.JSPS)

Keywords:

transparent conductive film,diluted magnetic semiconductor,epitaxial film

Diluted magnetic semiconductors have attracted much attention due to their potential for spintronic applications. In this study, we investigated the Fe-concentration dependence of the electrical, optical, and magnetic properties of the epitaxial Fe-doped indium tin oxide (ITO) films. Epitaxial Fe-doped ITO films with the different Fe concentrations were deposited on single-crystal yttria-stabilized zirconia substrates with (111) crystallographic orientation using radio-frequency magnetron sputtering. The Fe doping into the films decreased the carrier concentration and increased the resistivity. The optical bandgap of the films decreased with increasing Fe concentration. Room-temperature ferromagnetism was observed in all films irrespective of the Fe concentration. The magnetization per Fe atom decreased as the Fe concentration increased. We found that the Fe concentration plays a crucial role in controlling electrical, optical, and magnetic properties of the Fe-doped ITO films.