[14p-P02-1~20] 6.4 Thin films and New materials

[14p-P02-5] Fabrication and structural analyses of Hf_xZr_1-xO₂ gate insulators by Metal organic decomposition method

〇(BC)Ryoga Takemoto¹, Hiroshi Takase¹, Towa Nakazawa¹, Daiji Kitamura^1,2, Yoshiki Tate^1,2, Yuta Kawano^1,2, Kazuto Koike^1,2, Nobuya Hiroshiba^1,2 (1.OIT, 2.OIT NMRC)

Keywords:

ferroelectric,dielectric