Presentation Information
[14p-P03-1]Prediction of InAsSb HEMT Performance by Quantum-Corrected Monte Carlo Simulation
〇Naoya Kodama1, Kota Tobe1, Teruki Ueda1, Seima Tanaka1, Akira Endoh1, Hiroki Fujishiro1 (1.Tokyo Univ. of Science)
Keywords:
High Electron Mobility Transistor,Monte Carlo Simulation,InAsSb
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