The 72nd JSAP Spring Meeting 2025
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Session Details

Poster presentation13 Semiconductors : 13.7 Compound and power devices, process technology and characterization

[14p-P03-1~18]13.7 Compound and power devices, process technology and characterization

Fri. Mar 14, 2025 1:30 PM - 3:30 PM JST
Fri. Mar 14, 2025 4:30 AM - 6:30 AM UTC
P03 (Gymnasium)

[14p-P03-1]Prediction of InAsSb HEMT Performance by Quantum-Corrected Monte Carlo Simulation

〇Naoya Kodama1, Kota Tobe1, Teruki Ueda1, Seima Tanaka1, Akira Endoh1, Hiroki Fujishiro1 (1.Tokyo Univ. of Science)
Comment()

[14p-P03-2]Study on resonant tunneling diodes based on polarization-matched epitaxial structures with multicomponent group-III nitrides

〇(B)hikaru imaizumi1, akira mase1, takashi egawa1, makoto miyoshi1 (1.Nagoya Institute of Tech.)
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[14p-P03-3]Theoretical analysis of peak-to-valley ratios in current-voltage characteristics of GaN/AlN resonant tunneling diodes

〇Masanori Nagase1 (1.AIST)
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[14p-P03-4]N-polar AlGaN-channel HFETs fabricated using single-crystal AlN substrate

〇(M1)Hitoshi Susuki1, Yoshinobu Kometani1, Takashi Egawa1, Makoto Miyoshi1 (1.Nagoya Inst. Tech.)
Comment()

[14p-P03-5]Evaluation of epitaxial structure of 3C/4H-SiC heterojunction and AlGaN/GaN heterojunction

〇Tokio Takahashi1, Hiroyuki Sazawa1, Hisashi Yamada1, Shi-yang JI1, Yasunori Tanaka1 (1.AIST)
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[14p-P03-6]Fabrication and electrical characterization of Recessed-gate AlGaN/GaN HEMTs utilizing Contactless Photoelectrochemical etching

〇Naoki Shiozawa1, Yugo Oki1, Tokachi Katsumata1, Taketomo Sato1 (1.RCIQE, Hokkaido Univ.)
Comment()

[14p-P03-7]Low damage PEC etching and electrochemical characterization of n-GaN ICP-RIE processed surfaces

〇Takahiro Shimazaki1, Enku Takahashi1, Taketomo Sato1 (1.RCIQE, Hokkaido Univ.)
Comment()

[14p-P03-8]Fabrication and evaluation of enhancement-type insulated gate transistors for nitride semiconductor integrated circuits

〇Tatsuya Akamatsu1, Takuma Mori1, Sogo Shikata1, Masakazu Furukawa2, Akihiro Wakahara1, Hiroshi Okada1 (1.Toyohashi Univ., 2.Aries Reserch Limited Company)
Comment()

[14p-P03-9]Effects of Dehydrogenation Annealing Using AlON Surface-Protection Layer on p-GaN MOS interface

〇Masanobu Takahashi1, Yining Jiao1, Masamichi Akazawa1 (1.RCIQE, Hokkaido Univ.)
Comment()

[14p-P03-10]Characterization of plasma-induced defects in GaN by the reverse bias annealing (3)

〇Kazuki Tanaka1, Manato Fujitsuna1, Seiji Nakamura1 (1.Tokyo Metropolitan Univ.)
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[14p-P03-11]Photon Enhanced Thermionic Emission Characteristics of p-type InGaN Surface Deposited with Cesium

〇Jotaro Tashiro1, Shigeya Kimura2, Hisao Miyazaki2, Akihisa Ogino1 (1.Shizuoka Univ., 2.Toshiba Corp.)
Comment()

[14p-P03-12]Two-dimensional characterization of micro-trench-structure GaN JBS Diode by scanning internal photoemission microscopy

〇Hiroki Imabayashi1, Haruto Yoshimura1, Hiroshi Ohta2, Tomoyoshi Mishima2, Kenji Shiojima1 (1.Univ. of Fukui, 2.Hosei Univ.)
Comment()

[14p-P03-13]Two-dimensional characterization for degradation resistance of Au/Ni/n-β-Ga2O3 Schottky contacts under applying voltage by scanning internal photoemission microscopy

〇Hiroki Imabayashi1, Hitose Sawazaki1, Kohei Sasaki2, Kenji Shiojima1 (1.Univ. of Fukui, 2.Novel Crystal Tech.)
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[14p-P03-14]Dependence of electrical characteristics for β-Ga2O3 (010) fin devices on channel width

〇Tomoya Nakayama1, Hironori Okumura1 (1.Univ. of Tsukuba)
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English Presentation

[14p-P03-15]Impact of oxygen partial pressure on defects properties in sputtered vertical NiOx/β-Ga2O3 heterojunction diodes

〇(DC)Yun Jia1, Yui Sasaki1, Ryo Morita1, Kota Nakano1, Aboulaye Traore2, Hironori Okumura1, Takeaki Sakurai1 (1.Univ. of Tsukuba, 2.Sorbonne Paris Nord Univ.)
Comment()

[14p-P03-16]Non-Destructive Electronic State Analysis of Metal/SiC and Gate Dielectric/SiC Interfaces Using HE-HAXPES with Excitation X-Ray Energy Up to 30 keV

〇Satoshi Yasuno1, Tappei Nishihara1, Vuong Van Cuong2, Shin-Ichiro Kuroki2 (1.JASRI, 2.Hiroshima Univ.)
Comment()

[14p-P03-17]Molecular Dynamics Study of the Clustering tendencies of C atoms in Amorphous SiO2 with different O and N-containing conditions.

〇Keigo Ogawa1, Hiroki Sakakima1, Sakurako Miyazaki1, Satoshi Izumi1 (1.Univ. of Tokyo)
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[14p-P03-18]Study of Annealing Effects on SiO2 Films Formed by Atomic-Species-Enhanced Chemical Vapor Deposition

〇Hideaki Yamamoto1, Sogo Shikata1, Masakazu Furukawa2, Akihiro Wakahara1, Hiroshi Okada1 (1.Toyohashi Univ. Tech., 2.Aries Research Limited Company)
Comment()
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