[14p-P03-1~18] 13.7 Compound and power devices, process technology and characterization

[14p-P03-14] Dependence of electrical characteristics for β-Ga₂O₃ (010) fin devices on channel width

〇Tomoya Nakayama¹, Hironori Okumura¹ (1.Univ. of Tsukuba)

Keywords:

semiconductor,gallium oxide,FinFET

Gallium oxide (β-Ga₂O₃) has attracted attention as an affordable and high-performance material for power devices, with FinFET structures being particularly promising due to their ability to be constructed using only n-type layers. In this study, the electrical characteristics of β-Ga₂O₃ fin devices with various channel widths (0.8–1.9 μm) were evaluated prior to gate electrode attachment. All devices exhibited saturation of drain current at several mA, with an on-resistance of 5.9×10³ Ω. The differences in drain current density-voltage characteristics were attributed to variations in channel length caused by process errors and the influence of sheet resistance.