Presentation Information
[14p-P03-16]Non-Destructive Electronic State Analysis of Metal/SiC and Gate Dielectric/SiC Interfaces Using HE-HAXPES with Excitation X-Ray Energy Up to 30 keV
〇Satoshi Yasuno1, Tappei Nishihara1, Vuong Van Cuong2, Shin-Ichiro Kuroki2 (1.JASRI, 2.Hiroshima Univ.)
Keywords:
Photoelectron spectroscopy,Hard X-ray photoelectron spectroscopy,SiC
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