[14p-P03-1~18] 13.7 Compound and power devices, process technology and characterization

[14p-P03-3] Theoretical analysis of peak-to-valley ratios in current-voltage characteristics of GaN/AlN resonant tunneling diodes

〇Masanori Nagase¹ (1.AIST)

Keywords:

nitride semiconductor,resonant tunneling diode,terahertz

THz wave source and nonvolatile memory using GaN-based resonant tunneling diodes (GaN-based RTDs) have been investigated. In particular, clear negative differential resistances have been realized using GaN-based RTDs, owing to the recent progress in crystal growth techniques for GaN and related materials. However, peak-to-valley ratios (PVRs) obtained by GaN-based RTDs are small, compared to those by GaAs-based RTDs. In this presentation, the maximum value of PVRs obtained by GaN-based RTDs is discussed, based on the theoretical analysis of GaN-based RTDs including the phase relaxation of electrons.