[14p-P03-1~18] 13.7 Compound and power devices, process technology and characterization

[14p-P03-6] Fabrication and electrical characterization of Recessed-gate AlGaN/GaN HEMTs utilizing Contactless Photoelectrochemical etching

〇Naoki Shiozawa¹, Yugo Oki¹, Tokachi Katsumata¹, Taketomo Sato¹ (1.RCIQE, Hokkaido Univ.)

Keywords:

AlGaN/GaN HEMT

To improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs), we applied gate recess processing utilizing contactless photoelectrochemical (CL-PEC) etching. Experiments showed that processing the AlGaN layer just below the gate improved the controllability of the threshold voltage (V_th) and increased the mutual conductance (g_m). This showed an improvement of the gate controllability of the transistor.