[14p-P03-1~18] 13.7 Compound and power devices, process technology and characterization

[14p-P03-8] Fabrication and evaluation of enhancement-type insulated gate transistors for nitride semiconductor integrated circuits

〇Tatsuya Akamatsu¹, Takuma Mori¹, Sogo Shikata¹, Masakazu Furukawa², Akihiro Wakahara¹, Hiroshi Okada¹ (1.Toyohashi Univ., 2.Aries Reserch Limited Company)

Keywords:

GaN,High Electron Mobility Transistor,enhancement-type HEMT